EUV Interference Lithography for 1X nm

EUV Lithography—The Successor to Optical Lithography?

This paper discusses the basic concepts and current state of development of EUV lithography (EUVL), a relatively new form of lithography that uses extreme ultraviolet (EUV) radiation with a wavelength in the range of 10 to 14 nanometer (nm) to carry out projection imaging. Currently, and for the last several decades, optical projection lithography has been the lithographic technique used in the...

An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm

We present the potential optical performance capabilities of a next-generation extreme ultraviolet (EUV) mask-imaging microscope, based on the proven optical principle of the SEMATECH Berkeley Actinic Inspection Tool (AIT), but surpassing it in every performance metric. The new synchrotron-based tool, referred to here as the SEMATECH Berkeley Actinic Imaging Tool at 0.5 NA (AIT5) will enable re...

Approach to EUV Lithography Simulation

Fabrication of 50 nm period gratings with multilevel interference lithography.

We have developed a multilevel interference lithography process to fabricate 50 nm period gratings using light with a 351.1 nm wavelength. In this process multiple grating levels patterned by interference lithography are overlaid and spatial-phase aligned to a common reference grating using interferometry. Each grating level is patterned with offset phase shifts and etched into a single layer t...

High-resolution and large-area nanoparticle arrays using EUV interference lithography.

Well-defined model systems are needed for better understanding of the relationship between optical, electronic, magnetic, and catalytic properties of nanoparticles and their structure. Chemical synthesis of metal nanoparticles results in large size and shape dispersion and lack of lateral order. In contrast, conventional top-down lithography techniques provide control over the lateral order and...